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| Federico Faggin | |||
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Isola
Vicentina (Vicenza,Italy) December
1, 1941 (1)
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| Bibliography | ||
| 1968 | Faggin,
F., Klein, T., and Vadasz, L.:
Insulated Gate Field Effect Transistor Integrated Circuits with Silicon
Gates, presentato al IEEE International Electron Device Meeting.
Washington, D.C., ottobre 1968 (1) |
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| 1969 | Federico Faggin and Thomas Klein.: A Faster Generation of MOS Devices with Low Thresholds is Riding the Crest of the New Wave, Silicon-Gate IC's". Electronics magazine, 29 settembre 1969 (1) | ||
| 1970 | F. Faggin, T. Klein : Silicon Gate Technology". Solid State Electronics, 1970, Vol. 13, pp. 1125-1144 (1) | ||
| 1972 | F. Faggin and M. E. Hoff: Standard Parts and Custom Design Merge in a Four-chip Processor Kit. Electronics magazine, 24 aprile 1972 (1) | ||
| 1972 | Patent US
3673471 DOPED
SEMICONDUCTOR ELECTRODES FOR MOS TYPE DEVICES | ||
| 1972 | F. Faggin, M. Shima, M.E. Hoff, Jr., H. Feeney, S. Mazor: The MCS-4 - An LSI Microcomputer System, presentato alla IEEE 1972 Region Six Conference (1) | ||
| 1974 | Patent
CA 888436 DOPED
SEMICONDUCTOR ELECTRODES FOR MOS TYPE DEVICES | ||
| 1977 | |||
| 1985 | Patent EP
0141911 Telecommunications
apparatus. | ||
| 1995 | 3
Marzo Los Altos Hills, California
Intervista a
Faggin a cura dell'Università di Stanford ( Palo Alto ,
California) http://silicongenesis.stanford.edu/complete_listing.html |
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| note: | 1) fonte http://it.wikipedia.org/wiki/Federico_Faggin | ||