Rit. Brattain
 
    
 
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Walter Houser Brattain
 
Amoy, China 10.February.1902 - Seattle Wash, USA 13.October.1987
      

Bibliografia
 
 
      
1926
Oscillographic study of discharge of condenser through inductance and resistance and spark gap Walter Houser Brattain University of Oregon, 1926 - 20 pagine
 
1930
Design of a portable temperature-controlled piezo oscillator V. E. Heaton, Walter Houser Brattain, United States. National Bureau of StandardsU.S. Dept. of Commerce, Bureau of Standards, 1930 - 6 pagine
     
1937
07 10 1937 US2239770 ELECTRICALLY CONDUCTIVE DEVICE AND THE MANUFACTURE THEREOF
   
1942
20 01 1942 CA402409  ELECTRICALLY CONDUCTIVE DEVICE 
 
1943
28 07 1943 US2438110 ELECTRICAL TRANSLATING MATERIALS AND DEVICES AND METHOD OF MAKING THEM
 
 
 
1944
11 05 1944 US2605344  MAGNETOMETER HEAD 
1944
06 07 1944 Patent US 2605072  Integral-drive magnetometer head 
1944
07 07 1944  US2565799  WAVE TRAIN MAGNETOMETER
 
 
 
1946
20 02 1946 US2537255 LIGHT-SENSITIVE ELECTRIC DEVICE
 
1946
24 07 1946 US2537256 Light-sensitive electric device
 
 
 
1947
17 01 1947 US2537257 Light-sensitive electric device
   
  
         
1948
J. Bardeen and W. Brattain, "The Transistor, A Semiconductor Triode,"  Physical Review, vol. 74, no. 2, pp. 230-231, 1948.
1948
26 02 1948 NL54054 Three-electrode circuit element utilizing semiconductor materials
( US2524034-1950  BE486170-1948   BE484779-1948   NL84054-1957   NL85856-1957 DE 966492-1957  FR975245-1951    FR972207-1951    FR978836-1951  GB694021-1953  GB694023-1953    CH277131-1951    CH273525-1951 ) (1)
1948
26 02 1948 NL85856  Three-electrode circuit element utilizing semiconductor materials
( US2524034-1950  BE486170-1948   BE484779-1948   NL84054-1957   NL85856-1957 DE 966492-1957  FR975245-1951    FR972207-1951    FR978836-1951  GB694021-1953  GB694023-1953    CH277131-1951    CH273525-1951 ) (1)
 
1948
26 02 1948 US2524034  Three-electrode circuit element utilizing semiconductor materials
(US2524034-1950  BE486170-1948   BE484779-1948   NL84054-1957   NL85856-1957 DE 966492-1957  FR975245-1951    FR972207-1951    FR978836-1951  GB694021-1953  GB694023-1953    CH277131-1951    CH273525-1951 ) (1)
 
1948
17 06 1948 US2524035 THREE-ELECTRODE CIRCUIT ELEMENT UTILIZING SEMICONDUCTIVE MATERIALS
 
1948
10 09 1948 GB 694021 BARDEEN JOHN; BRATTAIN WALTER  Three-electrode circuit element utilizing semiconductor materials
( US2524034-1950  BE486170-1948   BE484779-1948   NL84054-1957   NL85856-1957 DE 966492-1957  FR975245-1951    FR972207-1951    FR978836-1951  GB694021-1953  GB694023-1953    CH277131-1951    CH273525-1951 ) (1)
   
1948
11 09 1948 BE484779  Three-electrode circuit element utilizing semiconductor materials
( US2524034-1950  BE486170-1948   BE484779-1948   NL84054-1957   NL85856-1957 DE 966492-1957  FR975245-1951    FR972207-1951    FR978836-1951  GB694021-1953  GB694023-1953    CH277131-1951    CH273525-1951 ) (1)
1948
23 09 1948  FR972207 Three-electrode circuit element utilizing semiconductor materials
( US2524034-1950  BE486170-1948   BE484779-1948   NL84054-1957   NL85856-1957 DE 966492-1957  FR975245-1951    FR972207-1951    FR978836-1951  GB694021-1953  GB694023-1953    CH277131-1951    CH273525-1951 ) (1)
1948
18 11 1948  FR975245  Three-electrode circuit element utilizing semiconductor materials
( US2524034-1950  BE486170-1948   BE484779-1948   NL84054-1957   NL85856-1957 DE 966492-1957  FR975245-1951    FR972207-1951    FR978836-1951  GB694021-1953  GB694023-1953    CH277131-1951    CH273525-1951 ) (1)
   
1948
07 12 1948 BE486170 Three-electrode circuit element utilizing semiconductor materials
( US2524034-1950  BE486170-1948   BE484779-1948   NL84054-1957   NL85856-1957 DE 966492-1957  FR975245-1951    FR972207-1951    FR978836-1951  GB694021-1953  GB694023-1953    CH277131-1951    CH273525-1951 ) (1)
    
1948
29 12 1948 US2663829 -  SEMICONDUCTOR TRANSLATOR
  
   
 
1949
11 01 1949 FR978836  Three-electrode circuit element utilizing semiconductor materials
( US2524034-1950  BE486170-1948   BE484779-1948   NL84054-1957   NL85856-1957 DE 966492-1957  FR975245-1951    FR972207-1951    FR978836-1951  GB694021-1953  GB694023-1953    CH277131-1951    CH273525-1951 ) (1)
 
1949
20 01 1949 DE966492   Three-electrode circuit element utilizing semiconductor materials
( US2524034-1950  BE486170-1948   BE484779-1948   NL84054-1957   NL85856-1957 DE 966492-1957  FR975245-1951    FR972207-1951    FR978836-1951  GB694021-1953  GB694023-1953  CH277131-1951    CH273525-1951 )
  
1949
25 02 1949 GB694023  Three-electrode circuit element utilizing semiconductor materials
( US2524034-1950  BE486170-1948   BE484779-1948   NL84054-1957   NL85856-1957 DE 966492-1957  FR975245-1951    FR972207-1951    FR978836-1951  GB694021-1953  GB694023-1953    CH277131-1951    CH273525-1951 ) (1)
 
1949
 
1949
15 09 1949 US2586597 -  Oscillation generator
 
1949
15 09 1949 US2589658 -SEMICONDUCTOR AMPLIFIER AND ELECTRODE STRUCTURE THEREFOR 
 
1949
15 09 1949 US2617865 -SEMICONDUCTOR AMPLIFIER AND ELECTRODE STRUCTURES THEREFOR 
       
1949
Walter H. Brattain, J. Bardeen  Principi fisici dell'azione del transistore ( BSTJ aprile  1949  pag. 239)
 
1949
J. Bardeen and W. Brattain, "Physical Principles Involved in Transistor Action," Physical Review, vol. 75, no. 8, pp. 1208-1226, 1949.
 
1949
J. Bardeen and W. Brattain   Conductivity of Germanium Phys Rev. 75:  1216 (1949)
 
 
  
1951
31 07 1951 CA475747  Light-sensitive electric device 
      
1951
15 02 1951 CH273525 Three-electrode circuit element utilizing semiconductor materials
( US2524034-1950  BE486170-1948   BE484779-1948   NL84054-1957   NL85856-1957 DE 966492-1957  FR975245-1951    FR972207-1951    FR978836-1951  GB694021-1953  GB694023-1953    CH277131-1951    CH273525-1951 ) (1)
 
1951
1951
15 08 1951 CH277131  Three-electrode circuit element utilizing semiconductor materials
( US2524034-1950  BE486170-1948   BE484779-1948   NL84054-1957   NL85856-1957 DE 966492-1957  FR975245-1951   FR972207-1951    FR978836-1951  GB694021-1953 GB694023-1953 CH277131-1951    CH273525-1951 ) (1)
   
  
 
1952
     
  
 
1953
16 10 1953 US2870344   SEMICONDUCTOR DEVICES
 
 
 
1955
Walter H. Brattain, C.G. B. Garrett Esperimenti sulla interfase tra Ge e un elettrolita ( BSTJ gennaio 1955 pag. 129)
 
1955
11 01 1955 CA509125  SEMI-CONDUCTOR TRANSLATORS
1955
08 06 1955 US2777974  PROTECTION OF SEMICONDUCTIVE DEVICES BY GASEOUS AMBIENTS
 
 
   
1956
Walter H. Brattain Surface properties of semiconductors -Nobel Lecture 11 dicembre 1956
 
1956
Walter H. Brattain, C.G. B. Garrett  Misure combinate dell'effeto di campo, della fototensione e della fotoconduttività di superficie ( BSTJ settembre 1956 pag. 1619)
 
1956
Development of concepts in semiconductor research: Richtmyer Lecture 1956 Walter Houser Brattain American Telephone and Telegraph Co., 1956 - 5 pagine
 
1956
Envelope 1973 July 10, New York, N.Y., First Day of Issue Walter Houser Brattain, William Shockley, John Bardeen 1973 The three men were awarded the Nobel Prize for Physics, 1956.
 
1956
   
 
      
1958
Walter H. Brattain  I0° anniversario del transistor ( PIRE -Procedeens of the Inst. of Radio Engineers  giugno 1958 pag. 953)
   
 
   
1959
 
 
 
1960
12 04 1960 CA595946  SEMICONDUCTOR DEVICES 
  
       
1962
Distribution of potential across low-index crystal planes of germanium contacting an aqueous solution Walter Houser Brattain, P. J. BoddyNational Academy of Science, 1962 - 8 pagine
  
1962
22 10 1947 US3022374 -  SCANNING INFRA-REB DETECTOR AND' RECORDER'